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30 May 14. API Technologies Corp. expands its line of Gallium Nitride (GaN) based power amplifiers to include designs that operate with output power levels up to 1,000 watts and frequencies to 18 GHz. These new pulsed, solid state power amplifiers are making their debut at the IEEE MTT-S International Microwave Symposium (IMS 2014) in Tampa, Florida. These new power amplifiers can serve as a cost-effective replacement for travelling wave tubes (TWT), as the amplifiers’ long life, and reduced size and weight offer better efficiencies than their TWT counterparts. API’s GaN-based pulsed power amplifiers can be used in numerous military and high end commercial applications including radar, communication transmitters, and jamming systems. These unique power amplifiers are designed and manufactured in the United States and utilize in-house thin and thick film technologies, as well as Surface Mount Technology (SMT). The power amplifies are offered in hermetically sealed packages using mixed SMT and chip-and-wire manufacturing processes. For high frequency applications, waveguide components can be integrated into the floor of the package to reduce combining losses and further increase functionality such as embedded harmonic filtering. Other options of the GaN-based power amplifiers include sleep mode, blanking, forward/reverse power detection, discrete power supply designs for wide DC input voltage ranges, as well as microprocessor-based control features for bias optimization, temperature compensation, fault monitoring, and customer interferences.

03 Jun 14. A pioneer in the design and fabrication of advanced semiconductors, Northrop Grumman Corporation has introduced two new high power gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) power amplifiers for Ka-band satellite communication terminals and point-to-point digital communication links. The APN228 and APN229 power amplifiers were developed with the company’s proprietary GaN high-electron mobility transistor (HEMT) power process and provide unmatched saturated output power of 13 and 8 watts, respectively. These second-generation power amplifiers offer the highest power density of any existing Ka-band GaN product on the market. The broadband, two-stage amplifiers operate from 27 to 31 GHz, and, when integrated in high efficiency solid-state power amplifiers (SSPAs), allow for higher data rate in communication systems. Product descriptions:
* The APN228 is a 16.0 mm2 GaN HEMT power amplifier that operates between 27 and 31 GHz.
* This MMIC PA provides 19.5 dB of linear gain, 41.2 dBm (13 W) of saturated output power and Power Added Efficiency (PAE) greater than 27 percent.
* Exhibits excellent linearity.
* Excellent option for next generation high power and efficiency SSPAs for commercial and military satellite applications.
* The APN229 is a 7.41 mm2 GaN HEMT power amplifier that operates between 27 and 31 GHz.
* This MMIC PA provides 20 dB of linear gain, 39 dBm (8 W) of saturated output power and PAE greater than 30 percent.
* Exhibits excellent linearity.
* Complimentary driver amplifier to the APN228.
Samples of these MMIC power amplifiers will be available by mid-July, and packaged versions will be available for sampling later this year. Information and data sheets on the Ka-band and other GaN power amplifiers are available online at: www.northropgrumman.com/mps
Northrop Grumman manufactures the power amplifiers at its state-of-the-art microelectronics wafer fabrication facility in Manhattan Beach. A Department of Defense Trusted Foundry, the facility uses advanced gallium nitride, gallium arsenide and indium phosphide semiconductor manufacturing processes.

30 May 14. Vishay Intertechnology, Inc. is adding to its QUAD HIFREQ series of high-power surface-mount multilayer ceramic chip ca

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