Qioptiq logo Raytheon


Web Page sponsor Oxley Developments


Oxley Group Ltd

Oxley specialises in the design and manufacture of advanced electronic and electro-optic components and systems for air, land and sea applications within the military sector. Established in 1942, Oxley has manufacturing facilities in the UK and USA and enjoys representation worldwide. The company’s products include night vision and LED lighting, data capture systems and electronic components. Oxley has pioneered the development of night vision compatible lighting. It offers a total package incorporating optical filters, equipment modification, cockpit and external lighting along with fleet wide upgrade services including engineering, installation, support, maintenance and training. The company’s long experience of manufacturing night vision lighting and LED indicators, coupled with advances in LED technology, has enabled it to develop LED solutions to replace incandescent and fluorescent lighting in existing applications as well as becoming the lighting option of choice in new applications such as portable military hospitals, UAV control stations and communication shelters.
20 May 10. Providing RF design engineers with the largest commercially available family of wide bandgap MMIC products, Cree, Inc. has developed five new GaN HEMT MMIC amplifiers that increase the range of frequencies available through X-Band. As part of a sample release, the MMICs are currently available as bare die and are targeted to be available in packaged formats later this year.
“We are pleased to expand our existing GaN power amplifier MMIC line and introduce our first GaN LNA MMIC product. The introduction of these MMICs expands our leadership position in providing GaN solutions that improve system performance beyond what can be realized using traditional GaAs MMIC technology for applications such as communication systems, homeland defense, electronic warfare and radar from S-band through X-band,” said Jim Milligan, Cree director of RF & Microwave Products. “By using our proven GaN MMIC process, the performance of these products can provide an attractive combination of power, efficiency and linearity for the system designer.”
First commercial low noise GaN HEMT MMIC,1.7 dB Noise Figure, 2.5 to 4 GHzThe CMLA2540001D heralds the introduction of the first commercially available GaN HEMT low noise amplifier (LNA) MMIC. The device operates over the 2.5 to 4 GHz band with small-signal gain of 28 dB and input/output return losses of greater than 10 dB. At an operating voltage of 24 volts, the device has a noise figure of better than 2 dB over the entire frequency range, with a typical value of 1.7 dB. Input/output third order intercept points are 12 and 38 dBm, respectively. These features make this MMIC an excellent choice for a robust LNA with improved linearity and input power handling for radar and other S-band applications. This LNA occupies a small chip size of only 1.7 mm x 2.5 mm (67 mil x 98 mil). Wide band 25W, 2 to 6 GHz MMIC power amplifiers
Designated the CMPA2060025D, this MMIC power amplifier delivers approximately 25 watts of output power from 2 to 6 GHz, improving on the performance and extending the frequency coverage of Cree’s popular CMPA2560025D Series devices down to 2.0 GHz. Power gain over the band is 17 dB with input/output return losses of better than 7 dB. The MMIC shows excellent power added efficiency (PAE) of typically 35% over the entire frequency range and has dimensions of 3.67 mm x 3.61 mm (144 mil x 142 mil). This product is ideal for homeland defense and electronic warfare applications. High power MMIC amplifiers deliver 75W with PAE of 60%
The CMPA2735075D high power amplifiers provide 75 watts of output power with a typical PAE of 60% over an instantaneous bandwidth of 2.7 to 3.5 GHz. Ideal for civil and military radar applications that require significant power,

Back to article list